Nano-MOS Devices and Method of Making

专利名称：Nano-MOS Devices and Method of Making发明人：Dongping Wu,Cheng Hu,Luo Zhu,Zhiwei

Zhu,Shili Zhang,Wei Zhang

申请号：US13519315申请日：20111031

公开号：US20140034955A1公开日：20140206

专利附图：

摘要：The present invention discloses a method of making nano-MOS devices having ametal gate, thereby avoiding the poly depletion effect, and enhancing the MOS device'sperformance. The method forms metal gates by depositing a metal film over sidewall

surfaces on two sides of a polycrystalline semiconductor layer. The metal in the metalfilm diffuses toward the sidewall surfaces of the polycrystalline semiconductor layer andforms, after annealing, metal-semiconductor compound nanowires (i.e., metal gates) onthe sidewall surfaces of the polycrystalline semiconductor layer. Thus, high-resolutionlithography is not required to form metal compound semiconductor nanowires, resultingin significant cost saving. At the same time, a nano-MOS device is also disclosed, whichincludes a metal gate, thereby avoiding the poly depletion effect, and resulting inenhanced MOS device performance.

申请人：Dongping Wu,Cheng Hu,Luo Zhu,Zhiwei Zhu,Shili Zhang,Wei Zhang

地址：Shanghai CN,Shanghai CN,Shanghai CN,Shanghai CN,Uppsala SE,Shanghai CN

国籍：CN,CN,CN,CN,SE,CN

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