Semiconductor device with trench gate

专利名称：Semiconductor device with trench gate发明人：Tomoki Inoue,Koichi Sugiyama,Hideaki

Ninomiya,Tsuneo Ogura

申请号：US10345268申请日：20030116

公开号：US20030102486A1公开日：20030605

专利附图：

摘要：An IGBT has a p-emitter layer and p-base layer, which are arranged on bothsides of an n-base layer. A pair of main trenches are formed to extend through the p-base layer and reach the n-base layer. In a current path region interposed between the

main trenches, a pair of n-emitter layers are formed on the surface of the p-base layer. Anarrowing trench is formed to extend through the p-base layer and reach the n-baselayer. The narrowing trench narrows a hole flow path formed from the n-base layer tothe emitter electrode through the p-base layer, thereby increasing the hole currentresistance.

申请人：INOUE TOMOKI,SUGIYAMA KOICHI,NINOMIYA HIDEAKI,OGURA TSUNEO

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