MMBT4401-7-F;MMBT4401-7;中文规格书,Datasheet资料

MMBT4401 40V NPN SURFACE MOUNT SMALL SIGNAL TRANSISTOR IN SOT23

Features

• • • • • •

Epitaxial Planar Die Construction

Complementary PNP Type Available (MMBT4403) Ideal for Medium Power Amplification and Switching Lead Free, RoHS Compliant (Note 1)

Halogen and Antimony Free \"Green\" Device (Note 2) Qualified to AEC-Q101 Standards for High Reliability

Mechanical Data

• Case: SOT23 • UL Flammability Rating 94V-0 • Case material: molded Plastic “Green” Compound • Moisture Sensitivity: Level 1 per J-STD-020 • Terminals: Matte Tin Finish • Weight: 0.008 grams (Approximate)

CSOT23

BETop View

Device Symbol

Top View

Pin-Out

Ordering Information (Note 3 & 4)

Product

Grade

Marking

K2X K2X K2X

Reel size (inches) Tape width (mm)

7 13 13

8 8 8

Quantity per reel

3,000 10,000 10,000

MMBT4401-7-F Commercial MMBT4401-13-F Commercial MMBT4401Q-13-F Automotive Notes: 1. No purposefully added lead. 2. Diodes Inc.`s “Green” Policy can be found on our website at http://www.diodes.com 3. For more packaging details, go to our website at http://www.diodes.com. 4. Products with Q-suffix are automotive grade. Automotive products are electrical and thermal the same as the commercial, except where specified.

Marking Information

K2X = Product Type Marking Code YM = Date Code Marking

K2X Y = Year (ex: Y = 2011)

M = Month (ex: 9 = September)

Date Code Key

Year 2010 2011 2012 2013 2014 2015 2016 2017

Code X Y Z A B C D E

YMMonth Code

Jan 1 Feb 2 Mar 3 Apr 4 May 5 Jun 6 Jul 7

Aug 8

Sep 9

Oct O

Nov N

Dec D

MMBT4401

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Document Number: DS30039 Rev. 14 - 2

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MMBT4401 Maximum Ratings @TA = 25°C unless otherwise specified

Characteristic Symbol Value Unit Collector-Base Voltage 60 V VCBO Collector-Emitter Voltage 40 V VCEO Emitter-Base Voltage 6.0 V VEBO Collector Current - Continuous (Note 5) 600 mA IC

Thermal Characteristics @TA = 25°C unless otherwise specified

Characteristic Symbol Value Unit 300 mW Power Dissipation (Note 5) PD

417 Thermal Resistance, Junction to Ambient (Note 5) °C/W RθJA

350 Thermal Resistance, Junction to Lead (Note 6) °C/W RθJL

-55 to +150 Operating and Storage Temperature Range °C TJ, TSTG

Notes:

5. For a device surface mounted on minimum recommended pad layout FR4 PCB with high coverage of single sided 1oz copper in still air conditions; the

device is measured when operating in a steady-state condition.

6. Thermal resistance from junction to solder-point (at the end of the collector lead).

Typical Thermal Characteristics

400350PD, POWER DISSIPATION (mW)

1IC, COLLECTOR CURRENT (A)3002502001501005000RθJA = 417°C/WNote 5DC0.1Pw = 100msPw = 10ms0.01TA = 25°CSingle Non-repetitive Pulse5075100125150175200TA, AMBIENT TEMPERATURE (°C)Fig. 1 Power Dissipation vs. Ambient Temperature

250.0010.1110100VCE, COLLECTOR-EMITTER VOLTAGE (V)Fig. 2 Typical Collector Currentvs. Collector-Emitter Voltage

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MMBT4401 Electrical Characteristics @TA = 25°C unless otherwise specified

Characteristic Symbol Min Max Unit Test Condition OFF CHARACTERISTICS (Note 7)

60 V Collector-Base Breakdown Voltage ⎯ IC = 100μA, IE = 0 BVCBO

40 V Collector-Emitter Breakdown Voltage ⎯ IC = 1.0mA, IB = 0 BVCEO

6.0 V Emitter-Base Breakdown Voltage ⎯ IE = 100μA, IC = 0 BVEBO

100 nA Collector Cutoff Current ⎯ VCE = 35V, VEB(OFF) = 0.4V ICEX

100 nA Base Cutoff Current ⎯ VCE = 35V, VEB(OFF) = 0.4V IBL

ON CHARACTERISTICS (Note 7)

IC = 100µA, VCE = 1.0V ⎯ 20

IC = 1.0mA, VCE = 1.0V 40 ⎯

80 DC Current Gain IC = 10mA, VCE = 1.0V hFE ⎯

⎯

100 300 IC = 150mA, VCE = 1.0V 40 ⎯ IC = 500mA, VCE = 2.0V

IC = 150mA, IB = 15mA 0.40

V Collector-Emitter Saturation Voltage ⎯ VCE(sat)

0.75 IC = 500mA, IB = 50mA

0.75 IC = 150mA, IB = 15mA 0.95

Base-Emitter Saturation Voltage V VBE(sat)

1.2 ⎯ IC = 500mA, IB = 50mA

SMALL SIGNAL CHARACTERISTICS Output Capacitance 6.5 pF Ccb ⎯ VCB = 5.0V, f = 1.0MHz, IE = 0 Input Capacitance 30 pF Ceb ⎯ VEB = 0.5V, f = 1.0MHz, IC = 0 Input Impedance 1.0 15 kΩ hie

-4Voltage Feedback Ratio 0.1 8.0 x 10 hre VCE = 10V, IC = 1.0mA,

f = 1.0kHz Small Signal Current Gain 40 500 ⎯ hfe

Output Admittance 1.0 30 μS hoe

VCE = 10V, IC = 20mA,

Current Gain-Bandwidth Product 250 MHz ⎯ fT

f = 100MHz

SWITCHING CHARACTERISTICS Delay Time 15 ns td ⎯ VCC = 30V, IC = 150mA,

VRise Time 20 ns tr ⎯ BE(off) = 2.0V, IB1 = 15mA

Storage Time 225 ns ts ⎯ VCC = 30V, IC = 150mA,

IB1 = IB2 = 15mA Fall Time 30 ns tf ⎯

Notes: 7.Short duration pulse test used to minimize self-heating effect.

Typical Electrical Characteristics

11,000IC, COLLECTOR CURRENT (A)0.1DCPw = 100mshFE ,DC CURRENT GAINPw = 10msTA = 125°C100TA = -25°CTA = +25°C0.01100.0010.1TA = 25°CSingle Non-repetitive PulseDUT mounted onto 1xMRP FR-4 boardVCE = 1.0V110100VCE, COLLECTOR-EMITTER VOLTAGE (V)Fig. 3 Typical Collector Currentvs. Collector-Emitter Voltage10.111,00010100IC, COLLECTOR CURRENT (mA)Fig. 4 Typical DC Current Gain vs. Collector Current

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MMBT4401 Typical Electrical Characteristics – Continued

ICIB= 10VBE(ON), BASE-EMITTER TURN-ON VOLTAGE (V)0.51.00.90.80.70.60.50.40.30.20.1VCE =5VTA = -50°CVCE(SAT), COLLECTOR-EMITTERSATURATION VOLTAGE (V)0.4TA = 25°C0.3TA = 150°CTA = 25°C0.2TA = 150°C0.1TA = -50°C011,00010100IC, COLLECTOR CURRENT (mA)Fig. 5 Collector-Emitter Saturation Voltagevs. Collector Current110100IC, COLLECTOR CURRENT (mA)Fig. 6 Typical Base-Emitter Turn-On Voltage vs. Collector Current1001,000fT, GAIN BANDWIDTH PRODUCT (MHz)VCE =5V30CAPACITANCE (pF)20105CoboCibo1001010.11.010VR, REVERSE VOLTAGE (V)Fig. 7 Typical Capacitance Characteristics5010100IC, COLLECTOR CURRENT (mA)Fig. 8 Typical Gain Bandwidth Product vs. Collector Current112.0VCE, COLLECTOR-EMITTER VOLTAGE (V)1.81.61.41.21.00.80.60.40.200.0010.1101IB, BASE CURRENT (mA)Fig. 9 Typical Collector Saturation Region0.01100IC = 300mAIC = 30mAIC = 1mAIC = 10mAIC = 100mA

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MMBT4401 Package Outline Dimensions

JFGKDLHK1MBCA SOT23

Dim Min Max Typ A 0.37 0.51 0.40 B 1.20 1.40 1.30 C 2.30 2.50 2.40 D 0. 1.03 0.915 F 0.45 0.60 0.535 G 1.78 2.05 1.83 H 2.80 3.00 2.90 J 0.0130.10 0.05 K 0.9031.10 1.00 K1 - - 0.400 L 0.45 0.61 0.55 M 0.0850.18 0.11 0° 8° - α

All Dimensions in mm

Suggested Pad Layout

YZCDimensionsValue (in mm)

Z 2.9 X 0.8 Y 0.9

2.0 C

1.35 E

XE MMBT4401

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MMBT4401 IMPORTANT NOTICE

DIODES INCORPORATED MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDS TO THIS DOCUMENT, INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE (AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION).

Diodes Incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other changes without further notice to this document and any product described herein. Diodes Incorporated does not assume any liability arising out of the application or use of this document or any product described herein; neither does Diodes Incorporated convey any license under its patent or trademark rights, nor the rights of others. Any Customer or user of this document or products described herein in such applications shall assume all risks of such use and will agree to hold Diodes Incorporated and all the companies whose products are represented on Diodes Incorporated website, harmless against all damages.

Diodes Incorporated does not warrant or accept any liability whatsoever in respect of any products purchased through unauthorized sales channel. Should Customers purchase or use Diodes Incorporated products for any unintended or unauthorized application, Customers shall indemnify and hold Diodes Incorporated and its representatives harmless against all claims, damages, expenses, and attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized application.

Products described herein may be covered by one or more United States, international or foreign patents pending. Product names and markings noted herein may also be covered by one or more United States, international or foreign trademarks.

LIFE SUPPORT

Diodes Incorporated products are specifically not authorized for use as critical components in life support devices or systems without the express written approval of the Chief Executive Officer of Diodes Incorporated. As used herein:

A. Life support devices or systems are devices or systems which: 1. are intended to implant into the body, or

2. support or sustain life and whose failure to perform when properly used in accordance with instructions for use provided in the

labeling can be reasonably expected to result in significant injury to the user.

B. A critical component is any component in a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or to affect its safety or effectiveness.

Customers represent that they have all necessary expertise in the safety and regulatory ramifications of their life support devices or systems, and acknowledge and agree that they are solely responsible for all legal, regulatory and safety-related requirements concerning their products and any use of Diodes Incorporated products in such safety-critical, life support devices or systems, notwithstanding any devices- or systems-related information or support that may be provided by Diodes Incorporated. Further, Customers must fully indemnify Diodes Incorporated and its representatives against any damages arising out of the use of Diodes Incorporated products in such safety-critical, life support devices or systems.

Copyright © 2011, Diodes Incorporated

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MMBT4401-7-F

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