专利名称：U-SHAPED SEMICONDUCTOR STRUCTURE发明人：KANGGUO CHENG,BRUCE B. DORIS,POUYA
HASHEMI,ALI KHAKIFIROOZ
申请号：US14590327申请日：20150106
公开号：US20150126009A1公开日：20150507
专利附图：
摘要：A method for forming a U-shaped semiconductor device includes growing a U-shaped semiconductor material along sidewalls and bottoms of trenches, which areformed in a crystalline layer. The U-shaped semiconductor material is anchored, and the
crystalline layer is removed. Backfilling is formed underneath the U-shaped
semiconductor material with a dielectric material for support. A semiconductor device isformed with the U-shaped semiconductor material.
申请人：INTERNATIONAL BUSINESS MACHINES CORPORATION
地址：Armonk NY US
国籍：US
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