Method of making a silicon package for a power sem

专利名称：Method of making a silicon package for a

power semiconductor device

发明人：Homer H. Glascock, II申请号：US07/681284申请日：19910408公开号：US05133795A公开日：19920728

摘要：A method is provided for making a hermetically sealed package for a powersemiconductor wafer having substantially entirely silicon materials selected to havecoefficients of thermal expansion closely matching that of the power semiconductorwafer. A semiconductor wafer such as a power diode includes a layer of silicon materialhaving first and second device regions on respective sides. An electrically conductive capand base of silicon are disposed in electrical contact with the first and second regions ofthe semiconductor device, respectively. An electrically insulative sidewall of silicon glassmaterial surrounds the semiconductor wafer, is spaced from an edge thereof, and isbonded to the cap and base for hermetically sealing the package. The glass sidewall isdirectly bonded to the base by bringing the base and sidewall into intimate contactunder a slight pressure and heating to a temperature at which the glass wets the siliconbase but does not soften enough to lose its form, holding this temperature for a holdingtime and cooling the composite the complete the bond.

申请人：GENERAL ELECTRIC COMPANY

代理人：Marvin Snyder,James C. Davis, Jr.

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