专利名称:PLATING METHOD AND PLATED METAL发明人:Do Young Cheong,Jin Wook Choi,June Seok
Oh,Ri A Kim,Hae Sun Yon
申请号:US16623775申请日:20191023
公开号:US20210340675A1公开日:20211104
专利附图:
摘要:Provided is a plating method including performing a first masking that masks afirst region and a second region among the first region including only a first metal andthe second region including only a second metal in a clad metal having the first metal andthe second metal cladded, and a third region including a contact part between the firstmetal and the second metal, precipitating the clad metal in a first plating solution,performing a second masking that removes the processed masking in one of the firstregion and the second region, precipitating at least the region where the second maskinghas been performed in a second plating solution, and precipitating the region where thesecond masking has been performed and the third region in a third plating solution.
申请人:DAE SAN ELECTRONICS CO., LTD.
地址:Hwaseong-si KR
国籍:KR
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