THIN FILM TRANSISTOR AND DISPLAY DEVICE USING THE

专利名称：THIN FILM TRANSISTOR AND DISPLAY

DEVICE USING THE SAME

发明人：Norihiro UEMURA,Hidekazu MIYAKE,Takeshi

NODA,Isao SUZUMURA,Yohei YAMAGUCHI

申请号：US14300257申请日：20140610

公开号：US20140362059A1公开日：20141211

专利附图：

摘要：A thin film transistor includes a drain electrode layer and a source electrodelayer that are formed above an oxide semiconductor layer via an insulating film. The drain

electrode layer and the source electrode layer are electrically connected with the oxidesemiconductor layer via through-holes formed in the insulating film. A first through-holethat electrically connects the drain electrode layer with the oxide semiconductor layerand a second through-hole that electrically connects the source electrode layer with theoxide semiconductor layer each include two or more through-holes that are arranged inparallel in a channel width direction of the thin film transistor. A total width of openingwidths of the first or second through-holes in the channel width direction is a channelwidth of the thin film transistor.

申请人：Japan Display Inc.

地址：Tokyo JP

国籍：JP

更多信息请下载全文后查看