您的当前位置：首页 Thin film transistor and display device using the

Thin film transistor and display device using the

来源：智榕旅游

专利内容由知识产权出版社提供

专利名称：Thin film transistor and display device using

the same

发明人：Isao Suzumura,Norihiro Uemura,Takeshi

Noda,Hidekazu Miyake,Yohei Yamaguchi

申请号：US14245102申请日：20140404公开号：US09391213B2公开日：20160712

专利附图：

摘要：In a bottom gate thin film transistor using a first oxide semiconductor layer as achannel layer, the first oxide semiconductor layer and second semiconductor layers

include In and O. An (O/In) ratio of the second oxide semiconductor layers is equal to orlarger than that of the first oxide semiconductor layer, and a film thickness thereof isthicker than that of the first oxide semiconductor layer.

申请人：Japan Display Inc.

地址：Tokyo JP

国籍：JP

代理机构：Ulmer & Berne LLP

更多信息请下载全文后查看

因篇幅问题不能全部显示，请点此查看更多更全内容

查看全文