Capacitor constructions

专利名称：Capacitor constructions

发明人：Marsela Pontoh,Cem Basceri,Thomas M.

Graettinger

申请号：US11859116申请日：20070921公开号：US07414297B2公开日：20080819

专利附图：

摘要：The invention includes methods of forming rugged electrically conductivesurfaces. In one method, a layer is formed across a substrate and subsequently at leastpartially dissociated to form gaps extending to the substrate. An electrically conductive

surface is formed to extend across the at least partially dissociated layer and within thegaps. The electrically conductive surface has a rugged topography imparted by the atleast partially dissociated layer and the gaps. The topographically rugged surface can beincorporated into capacitor constructions. The capacitor constructions can be

incorporated into DRAM cells, and such DRAM cells can be incorporated into electricalsystems.

申请人：Marsela Pontoh,Cem Basceri,Thomas M. Graettinger

地址：Boise ID US,Boise ID US,Boise ID US

国籍：US,US,US

代理机构：Wells St. John P.S.

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