Capacitor constructions

专利名称：Capacitor constructions

发明人：Marsela Pontoh,Cem Basceri,Thomas M.

Graettinger

申请号：US10841686申请日：20040506

公开号：US20040245559A1公开日：20041209

专利附图：

摘要：The invention includes methods of forming rugged electrically conductivesurfaces. In one method, a layer is formed across a substrate and subsequently at leastpartially dissociated to form gaps extending to the substrate. An electrically conductive

surface is formed to extend across the at least partially dissociated layer and within thegaps. The electrically conductive surface has a rugged topography imparted by the atleast partially dissociated layer and the gaps. The topographically rugged surface can beincorporated into capacitor constructions. The capacitor constructions can be

incorporated into DRAM cells, and such DRAM cells can be incorporated into electricalsystems.

申请人：PONTOH MARSELA,BASCERI CEM,GRAETTINGER THOMAS M.

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